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 TCST110. up to TCST230.
Vishay Telefunken
Transmissive Optical Sensor with Phototransistor Output
Description
This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor.
B)
Applications
D Contactless optoelectronic switch, control and
counter
A)
15136
Features
D Compact construction D No setting efforts D Polycarbonate case protected against
ambient light
95 10796
+
D
D 2 case variations D 3 different apertures D CTR selected in groups
(regarding fourth number of type designation)
E 7.6 0.3"
+
Top view
Order Instruction
Ordering Code TCST1103A) TCST2103B) TCST1202A) TCST2202B) TCST1300A) TCST2300B) Resolution (mm) / Aperture (mm) 0.6 / 1.0 0.4 0.2 / / 0.5 0.25 Remarks No mounting flags With two mounting flags No mounting flags With two mounting flags No mounting flags With two mounting flags
Document Number 83764 Rev. A5, 08-Jun-99
www.vishay.com 1 (9)
TCST110. up to TCST230.
Vishay Telefunken Absolute Maximum Ratings
Input (Emitter)
Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 6 60 3 100 100 Unit V mA A mW C
tp 10 ms Tamb 25C
Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC ICM PV Tj Value 70 7 100 200 150 100 Unit V V mA mA mW C
tp/T = 0.5, tp 10 ms Tamb 25C
Coupler
Parameter Total power dissipation Operating temperature range Storage temperature range Soldering temperature Test Conditions Tamb 25C Symbol Ptot Tamb Tstg Tsd Value 250 -55 to +85 -55 to +100 260 Unit mW C C C
2 mm from case, t 5 s
www.vishay.com 2 (9)
Document Number 83764 Rev. A5, 08-Jun-99
TCST110. up to TCST230.
Vishay Telefunken Electrical Characteristics (Tamb = 25C)
Input (Emitter)
Parameter Forward voltage Junction capacitance Test Conditions IF = 60 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF
Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test Conditions IC = 1 mA IE = 10 mA VCE = 25 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. Unit V V nA
100
Coupler
Parameter Current transfer ratio Test Conditions VCE = 5 V, IF = 20 mA Type Symbol TCST1103, CTR TCST2103 TCST1202, CTR TCST2202 TCST1300, CTR TCST2300 TCST1103, IC TCST2103 TCST1202, IC TCST2202 TCST1300, IC TCST2300 TCST1103, VCEsat TCST2103 TCST1202, VCEsat TCST2202 TCST1300, VCEsat TCST2300 TCST1103, s TCST2103 TCST1202, s TCST2202 TCST1300, s TCST2300 Min. 10 5 1.25 2 1 0.25 Typ. 20 10 2.5 4 2 0.5 0.4 0.4 0.4 0.6 0.4 0.2 Max. Unit % % % mA mA mA V V V mm mm mm
Collector current
VCE = 5 V, IF = 20 mA
Collector emitter saturation voltage
Resolution, path of the shutter crossing the radiant sensitive zone
IF = 20 mA, IC = 1 mA IF = 20 mA, IC = 0.5 mA IF = 20 mA, IC = 0.1 mA ICrel = 10 to 90%
Document Number 83764 Rev. A5, 08-Jun-99
www.vishay.com 3 (9)
TCST110. up to TCST230.
Vishay Telefunken Switching Characteristics
Parameter Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 2 mA, RL = 100 W (see figure 1) Symbol ton toff Typ. 10.0 8.0 Unit
ms ms
0
IF
IF
+5V IC = 2 mA; adjusted through input amplitude IF
96 11698
RG = 50 W tp = 0.01 T tp = 50 ms
0 tp IC Channel I Channel II 50 W 100 W Oscilloscope RL 1 MW CL 10% 0 100% 90%
t
y x 20 pF
95 10897
Figure 1. Test circuit, saturated operation
td
tr ts toff ts tf toff (= ts + tf) tf
t
ton tp td tr ton (= td + tr) pulse duration delay time rise time turn-on time
storage time fall time turn-off time
Figure 2. Switching times
www.vishay.com 4 (9)
Document Number 83764 Rev. A5, 08-Jun-99
TCST110. up to TCST230.
Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified)
400 P tot - Total Power Dissipation ( mW ) 10000 ICEO- Collector Dark Current, with open Base ( nA ) VCE=25V IF=0
300 Coupled device 200 Phototransistor 100 IR-diode
1000
100
10
0 0
95 11088
1 30 60 90 120 150
95 11090
0
25
50
75
100
Tamb - Ambient Temperature ( C )
Tamb - Ambient Temperature ( C )
Figure 3. Total Power Dissipation vs. Ambient Temperature
1000.0
Figure 6. Collector Dark Current vs. Ambient Temperature
10.000 VCE=5V
I F - Forward Current ( mA )
100.0
IC - Collector Current ( mA ) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V )
1.000
10.0
0.100
1.0
0.010
0.1
96 11862
0.001 0.1
96 12066
1.0
10.0
100.0
IF - Forward Current ( mA )
Figure 4. Forward Current vs. Forward Voltage
CTR rel - Relative Current Transfer Ratio 2.0
Figure 7. Collector Current vs. Forward Current
10.00 IC - Collector Current ( mA )
VCE=5V IF=20mA 1.5
IF=50mA 20mA
1.00
10mA 5mA 2mA
1.0
0.10 1mA
0.5
0 -25
95 11089
0
25
50
75
100
0.01 0.1
96 12067
1.0
10.0
100.0
Tamb - Ambient Temperature ( C )
VCE - Collector Emitter Voltage ( V )
Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature
Document Number 83764 Rev. A5, 08-Jun-99
Figure 8. Collector Current vs. Collector Emitter Voltage
www.vishay.com 5 (9)
TCST110. up to TCST230.
Vishay Telefunken
100.0 CTR - Current Transfer Ratio ( % ) I Crel - Relative Collector Current VCE=5V 110 100 90 80 70 60 50 40 30 20 10 0 -0.5 -0.4 -0.3 -0.2 -0.1 -0.0 0.1 0.2 0.3 0.4 0.5
96 12005
0
A=1mm
10.0
s
1.0
0.1 0.1
96 12068
1.0
10.0
100.0
IF - Forward Current ( mA )
s - Displacement ( mm )
Figure 9. Current Transfer Ratio vs. Forward Current
t on / t off - Turn on / Turn off Time ( m s ) 20
Figure 11. Relative Collector Current vs. Displacement
110 I Crel - Relative Collector Current
15
Non Saturated Operation VS=5V RL=100W
100 90 80 70 60 50 40 30 20 10
0
A=0.5mm
s
10 ton 5 toff 0 0 2 4 6 8 10
0 -0.5 -0.4 -0.3 -0.2 -0.1 -0.0 0.1 0.2 0.3 0.4 0.5
96 12006
95 11086
IC - Collector Current ( mA )
s - Displacement ( mm )
Figure 10. Turn on / off Time vs. Collector Current
Figure 12. Relative Collector Current vs. Displacement
110 100 I Crel - Relative Collector Current 90 80 70 60 50 40 30 20 10 0 -0.5 -0.4 -0.3 -0.2 -0.1 -0.0 0.1 0.2 0.3 0.4 0.5
96 12007
0
A=0.25mm
s
s - Displacement ( mm )
Figure 13. Relative Collector Current vs. Displacement
www.vishay.com 6 (9)
Document Number 83764 Rev. A5, 08-Jun-99
TCST110. up to TCST230.
Vishay Telefunken Dimensions of TCST1.0. in mm
96 12094
Document Number 83764 Rev. A5, 08-Jun-99
www.vishay.com 7 (9)
TCST110. up to TCST230.
Vishay Telefunken Dimensions of TCST2.0. in mm
96 12095
www.vishay.com 8 (9)
Document Number 83764 Rev. A5, 08-Jun-99
TCST110. up to TCST230.
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 83764 Rev. A5, 08-Jun-99
www.vishay.com 9 (9)


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